---
title: "BJT as a switch in power circuit"
subject: "Power Electronics"
chapter: 1
key: "semester_7/power_electronics:bjt-as-power-switch"
source: https://www.bctengineer.com/q/semester_7/power_electronics/bjt-as-power-switch
site: BCT Engineering
---

# BJT as a switch in power circuit

Power Electronics · Chapter 1: Characteristics and specification of power electronic devices

- Asked in: 2074 Asoj, 8 marks; 2073 Shrawan, 8 marks (asked 2 times)
- Video: [Electronic Basics #22: Transistor (BJT) as a Switch](https://www.youtube.com/watch?v=WRm2oUw4owE) — GreatScott!
- Answer checked by Claude Opus 5.5 (high effort) on 2026-10-14
- Page: https://www.bctengineer.com/q/semester_7/power_electronics/bjt-as-power-switch
- Whole chapter: https://www.bctengineer.com/md/semester_7/power_electronics/chapter-1

## Question

Explain how a transistor (BJT) can be used as a switch in power circuit.

## Short answer

A BJT acts as a switch by operating only in cut-off for OFF and saturation for ON, avoiding the active region. In cut-off IC is nearly zero; in saturation VCE(sat) is about 0.2 to 1 V, so power loss is small. Base current must exceed ICS/beta_min, with overdrive factor 1.5 to 3.

## Answer

A BJT is used as a switch in power circuits by driving it either fully OFF (**cut-off**) or fully ON (**saturation**) with its base current, never in the active region. In this way it behaves like an ideal ON/OFF switch with very small power loss.

#### Circuit and operation

```text
                 +Vcc
                  |
                 RL (load)
                  |
          Rb     C|  iC
   vB o--/\/\/---B|/
                  |\  NPN
                 E|
                  |
                 GND
```

- **OFF state (cut-off):** when $v_B \le 0$, $I_B = 0$, both junctions are reverse biased and $I_C \approx 0$ (only leakage). The transistor acts as an open switch and the full supply voltage $V_{CC}$ appears across C-E.
- **ON state (saturation):** when enough base current is supplied, both junctions are forward biased. $V_{CE(sat)}$ is only about 0.2 to 1 V, so the transistor acts as a closed switch and $I_C = \frac{V_{CC} - V_{CE(sat)}}{R_L}$.
- To be sure of saturation, the base current is made larger than the minimum value:
$$
I_B > I_{BS} = \frac{I_{CS}}{\beta_{min}}, \qquad \text{ODF} = \frac{I_B}{I_{BS}}
$$
where ODF (overdrive factor) is usually 1.5 to 3 (too much overdrive increases storage time).
- The active region is avoided because both $V_{CE}$ and $I_C$ are large there, giving high power loss $V_{CE} I_C$. In the switching mode the loss is small: in cut-off the current is nearly zero, and in saturation the voltage is nearly zero.

```text
   iC
    ^ saturation
    | |     IB4
    | |----------------------
    | |     IB3
    | |----------------------  active
    | |     IB2               region
    | |----------------------
    | |     IB1
    | |----------------------
    |/_______________________  IB = 0
    +----------------------------> vCE
            cut-off region
```

#### Switching waveforms and losses

```text
 vB   ^ ____          ____
      ||    |        |    |
      |+    +--------+    +----
 vCE  ^     ______        ______
      |    |      |      |
 Vcc  |----'      |------'
 ~0.2 |           '__ON__
 iC   ^ ___        ___
      ||   |      |   |
      |'   '------'   '-----> t
```

- Conduction loss $= V_{CE(sat)} I_C \times$ duty ratio (small because $V_{CE(sat)}$ is small).
- Switching loss occurs during the short turn-on and turn-off intervals; it rises with frequency.

#### Example

For $V_{CC} = 200$ V, $R_L = 10\ \Omega$, $V_{CE(sat)} = 1$ V and $\beta_{min} = 20$: $I_{CS} = (200 - 1)/10 = 19.9$ A, $I_{BS} = 19.9/20 = 0.995$ A. With ODF = 2, the base drive is designed for about 2 A.

#### Points to note

- A freewheeling diode is connected across inductive loads to protect the BJT from voltage spikes at turn-off.
- A negative base current at turn-off reduces storage time.
- The BJT is a current-controlled device, so its driver must supply a continuous base current; for higher frequency a MOSFET or IGBT is often preferred.

## Check yourself

The answer's key points as multiple-choice questions, with the correct option and why.

1. When the BJT switch is in the OFF state, what appears across collector-emitter?
   A. About 0.2 V
   B. Zero volts
   C. VCC/2
   D. The full supply voltage VCC
   Answer: D. In cut-off IC is about zero, so there is no drop across RL and the full VCC appears across C-E, like an open switch. (Key point: Switch states)

2. With VCC = 200 V, RL = 10 ohm, VCE(sat) = 1 V and beta_min = 20, what is the minimum base current IBS?
   A. 0.995 A
   B. 19.9 A
   C. 2 A
   D. 10 A
   Answer: A. ICS = (200-1)/10 = 19.9 A, so IBS = 19.9/20 = 0.995 A. With ODF = 2 the drive is about 2 A. (Key point: Saturation current)

3. Which statement about BJT switch losses is correct?
   A. Conduction loss is large because VCE(sat) is large
   B. Switching loss occurs at turn-on and turn-off and rises with frequency
   C. Switching loss is independent of frequency
   D. There is no loss in a BJT switch
   Answer: B. Conduction loss is VCE(sat) x IC x duty (small), while switching loss occurs in the short transitions and increases with frequency. (Key point: Losses)

4. Why is a freewheeling diode connected across an inductive load of a BJT switch?
   A. To increase the base current
   B. To reduce the ODF
   C. To protect the BJT from voltage spikes at turn-off
   D. To keep the BJT in the active region
   Answer: C. The inductive load current continues at turn-off; the diode provides a path and prevents a large voltage spike across the BJT. (Key point: Freewheeling diode)

## Related in Power Electronics

- [Power transistor switch and opto-coupler isolation](https://www.bctengineer.com/question.md?key=semester_7%2Fpower_electronics%3Apower-transistor-switch-opto) — Power Electronics, chapter 1
- [Power transistor V-I and static switch](https://www.bctengineer.com/question.md?key=semester_7%2Fpower_electronics%3Apower-transistor-vi-static-switch) — Power Electronics, chapter 1, asked 2×
- [Transistor switch with opto-coupler base drive](https://www.bctengineer.com/question.md?key=semester_7%2Fpower_electronics%3Atransistor-switch-opto-base-signal) — Power Electronics, chapter 1
- [Transistor as static switch and base drive](https://www.bctengineer.com/question.md?key=semester_7%2Fpower_electronics%3Atransistor-static-switch-base-drive) — Power Electronics, chapter 1, asked 4×
- [Power transistor switching and base drive](https://www.bctengineer.com/question.md?key=semester_7%2Fpower_electronics%3Apower-transistor-switching-base-drive) — Power Electronics, chapter 1
- [Step-down chopper with switch drop: efficiency](https://www.bctengineer.com/question.md?key=semester_7%2Fpower_electronics%3Astep-down-chopper-efficiency-1v) — Power Electronics, chapter 4

## Related in other subjects

- [Transistor as a switch](https://www.bctengineer.com/question.md?key=semester_3%2Felectronics_devices_and_circuit%3Abjt-switch-cutoff-saturation) — Electronics Devices and Circuit, chapter 2
- [BJT as a switch](https://www.bctengineer.com/question.md?key=semester_3%2Felectronics_devices_and_circuit%3Abjt-as-switch) — Electronics Devices and Circuit, chapter 2, asked 10×
- [BJT as switch; MOSFET versus BJT](https://www.bctengineer.com/question.md?key=semester_2%2Fbasic_electronics_engineering%3Abjt-as-switch-mosfet-vs-bjt) — Basic Electronics Engineering, chapter 3
- [BJT as a switch](https://www.bctengineer.com/question.md?key=semester_1%2Ffundamental_of_electrical_and_electronics_engineering%3Abjt-as-switch) — Fundamental of Electrical and Electronics Engineering, chapter 5
