---
title: "Butterworth/Chebyshev LPF and double π-section"
subject: "RF and Microwave Engineering"
chapter: 6
key: "semester_7/rf_and_microwave_engineering:butterworth-chebyshev-double-pi"
source: https://www.bctengineer.com/q/semester_7/rf_and_microwave_engineering/butterworth-chebyshev-double-pi
site: BCT Engineering
---

# Butterworth/Chebyshev LPF and double π-section

RF and Microwave Engineering · Chapter 6: RF Design Practices

- Asked in: 2076 Bhadra, 8+2 marks
- Video: [Low pass filter implementation using stub||Richard's transformation and Kuroda's identities||](https://www.youtube.com/watch?v=-l5nTRQxbtg) — RF Design Basics
- Answer checked by Claude Opus 5.5 (high effort) on 2026-10-14
- Page: https://www.bctengineer.com/q/semester_7/rf_and_microwave_engineering/butterworth-chebyshev-double-pi
- Whole chapter: https://www.bctengineer.com/md/semester_7/rf_and_microwave_engineering/chapter-6

## Question

How is a low pass filter prototype based on Butterworth and Chebyshev approximations designed using insertion loss method? Implement a low pass filter double π-sections using microstrips.

## Short answer

Insertion loss method uses PLR = 1/(1−|Γ|²). Butterworth: PLR = 1+k²(ω/ωc)^2N, gk = 2 sin[(2k−1)π/2N]. Chebyshev: PLR = 1+k²TN², with ripple formulas. Double π (N=5) at 2 GHz, 50 Ω: Butterworth C1=C5=0.984 pF, L2=L4=6.438 nH, C3=3.183 pF; Chebyshev 0.5 dB: C1=C5=2.715 pF, L2=L4=4.893 nH, C3=4.044 pF. Microstrip: shunt C as low-Z lines, series L as high-Z lines.

## Answer

In the **insertion loss method**, the filter response is defined by the **power loss ratio**:

```text
PLR = P_available / P_delivered = 1 / (1 − |Γ(ω)|²)
IL (dB) = 10 log PLR
```

A physically realisable PLR must be a ratio of even polynomials in ω, so the designer chooses a polynomial that gives the wanted response.

#### Prototype design steps (both responses)

1. Specify fc, R0, ripple Lr (Chebyshev) and stopband attenuation.
2. Choose PLR and find the order N.
3. Get prototype values g1 … gN+1 (R0 = 1 Ω, ωc = 1 rad/s).
4. Scale: L = g·R0/ωc, C = g/(R0·ωc).
5. Realise with microstrip lines and simulate.

#### Butterworth (maximally flat)

```text
PLR = 1 + k²(ω/ωc)^(2N)
gk  = 2 sin[(2k − 1)π/(2N)]
```

Flat passband, monotonic roll-off of 20N dB/decade.

#### Chebyshev (equal ripple)

```text
PLR = 1 + k²·TN²(ω/ωc),  TN = Chebyshev polynomial
k² = 10^(Lr/10) − 1   (ripple Lr dB)
β = ln[coth(Lr/17.37)],  γ = sinh[β/(2N)]
g1 = 2a1/γ,  gk = 4a(k−1)ak / [b(k−1)g(k−1)]
ak = sin[(2k−1)π/2N],  bk = γ² + sin²(kπ/N)
```

Ripple in the passband, but a sharper cut-off for the same N. For odd N, g(N+1) = 1.

#### Double π-section (N = 5) values

A double π-section is C–L–C–L–C (two π sections sharing the middle C). Assume fc = 2 GHz, R0 = 50 Ω, ripple 0.5 dB.

| k | Butterworth gk | C or L | Chebyshev 0.5 dB gk | C or L |
|---|---|---|---|---|
| 1 | 0.618 | 0.984 pF | 1.7058 | 2.715 pF |
| 2 | 1.618 | 6.438 nH | 1.2296 | 4.893 nH |
| 3 | 2.000 | 3.183 pF | 2.5409 | 4.044 pF |
| 4 | 1.618 | 6.438 nH | 1.2296 | 4.893 nH |
| 5 | 0.618 | 0.984 pF | 1.7058 | 2.715 pF |

#### Microstrip implementation (stepped impedance, Chebyshev)

Shunt C → low-Z line (20 Ω), βl = g·Zℓ/R0; series L → high-Z line (120 Ω), βl = g·R0/Zh. Assumed εr = 4.2, h = 1.58 mm.

| Element | Z | βl | Length | Width |
|---|---|---|---|---|
| C1, C5 | 20 Ω | 39.09° | 8.61 mm | 11.27 mm |
| L2, L4 | 120 Ω | 29.35° | 7.26 mm | 0.43 mm |
| C3 | 20 Ω | 58.23° | 12.83 mm | 11.27 mm |

(For the Butterworth version: C1 = C5 → 14.16°, L2 = L4 → 38.63°, C3 → 45.84°.)

```text
 50Ω  ____        ______        ____  50Ω
 ====|    |------|      |------|    |====
     | C1 |  L2  |  C3  |  L4  | C5 |
     |____| thin |______| thin |____|
```

The middle capacitor line is long (βl > 45°), so in practice it is split or tuned in simulation, and step discontinuities are included.

## Check yourself

The answer's key points as multiple-choice questions, with the correct option and why.

1. Compared to Butterworth for the same N, Chebyshev gives:
   A. Flat passband, slower cut-off
   B. Passband ripple but sharper cut-off
   C. No ripple and sharper cut-off
   D. Slower cut-off and ripple
   Answer: B. Equal-ripple PLR 1 + k²T_N² trades ripple for sharper roll-off. (Key point: Chebyshev vs Butterworth)

2. How is k² related to the ripple Lr in dB?
   A. k² = 10^(Lr/10) − 1
   B. k² = Lr/10
   C. k² = 10 log Lr
   D. k² = 1 − Lr
   Answer: A. k² = 10^(Lr/10) − 1. (Key point: Ripple constant)

3. What is the structure of a double π-section (N = 5)?
   A. L–C–L–C–L
   B. C–L–C–L–C, two π sections sharing the middle C
   C. C–C–L–L–C
   D. Two separate L-sections
   Answer: B. Two π sections share the middle shunt capacitor. (Key point: Double π)

4. Why is the middle capacitor line (58.23°) a problem?
   A. βl > 45°, so the short-line approximation fails; split or tune it
   B. It is too narrow
   C. Its impedance is 50 Ω
   D. It is an inductor
   Answer: A. Lines longer than about 45° are not accurate lumped approximations, so they are split or tuned in simulation. (Key point: Microstrip lengths)

## Related in RF and Microwave Engineering

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