---
title: "h-parameters versus S-parameters"
subject: "RF and Microwave Engineering"
chapter: 3
key: "semester_7/rf_and_microwave_engineering:h-parameters-vs-s-parameters"
source: https://www.bctengineer.com/q/semester_7/rf_and_microwave_engineering/h-parameters-vs-s-parameters
site: BCT Engineering
---

# h-parameters versus S-parameters

RF and Microwave Engineering · Chapter 3: RF and Microwave Network Theory and Analysis

- Asked in: 2080 Chaitra, 5+5 marks
- Video: [Scattering Parameters | Why S Parameters in Microwave measurement? | Calculation of S Parameters](https://www.youtube.com/watch?v=-PZQm_404Js) — Engineering Funda
- Answer checked by Claude Opus 5.5 (high effort) on 2026-10-14
- Page: https://www.bctengineer.com/q/semester_7/rf_and_microwave_engineering/h-parameters-vs-s-parameters
- Whole chapter: https://www.bctengineer.com/md/semester_7/rf_and_microwave_engineering/chapter-3

## Question

Compare h-parameters with S-parameter. Using a two-port network describe S-parameters.

## Short answer

h-parameters use voltage/current with open/short terminations for low frequencies; S-parameters use incident/reflected waves with matched loads, safe for active devices, and work in waveguides. For a two-port, b1=S11 a1+S12 a2, b2=S21 a1+S22 a2, with a_n=V_n^+/√Z0, b_n=V_n^-/√Z0, yielding reflection and transmission coefficients when ports are terminated in Z0.

## Answer

#### Comparison of h-parameters and S-parameters
**h-parameters (hybrid parameters)** relate a mix of voltages and currents (V1, I2 in terms of I1, V2) and are used at low frequencies. **S-parameters** relate incident and reflected waves and are used at RF and microwave frequencies.

| Point | h-parameters | S-parameters |
|---|---|---|
| Variables | Voltage and current (V1, I1, V2, I2) | Incident and reflected waves (a, b) |
| Equations | V1 = h11·I1 + h12·V2; I2 = h21·I1 + h22·V2 | b1 = S11·a1 + S12·a2; b2 = S21·a1 + S22·a2 |
| Measurement condition | Output short (V2 = 0) or input open (I1 = 0) | All other ports matched to Z0 |
| Frequency range | Low frequency (audio, BJT models) | RF and microwave |
| Units | h11 in Ω, h22 in S, h12 and h21 unitless | All dimensionless (complex ratios) |
| Effect on active devices | Short/open can cause oscillation | Matched load keeps device stable |
| Use in waveguides | Not possible (V, I not unique) | Possible |
| Physical meaning | Input impedance, current gain, etc. | Reflection, transmission, power gain |
| Instrument | Multimeter, curve tracer | Vector network analyzer |

#### S-parameters of a two-port network
```text
        a1 ->           -> b2
  o-----------+-------+-----------o
  port 1      |  [S]  |      port 2
  o-----------+-------+-----------o
        <- b1           <- a2
```
At port *n*, with line impedance Z0:
```text
 an = Vn+/√Z0 = (Vn + Z0·In)/(2√Z0)   (incident wave)
 bn = Vn-/√Z0 = (Vn - Z0·In)/(2√Z0)   (reflected wave)
```
The network relates them linearly:
```text
 | b1 |   | S11  S12 | | a1 |
 | b2 | = | S21  S22 | | a2 |
```
- **S11 = b1/a1 (a2 = 0):** input reflection coefficient, output terminated in Z0.
- **S21 = b2/a1 (a2 = 0):** forward transmission coefficient (gain or loss).
- **S22 = b2/a2 (a1 = 0):** output reflection coefficient, input terminated in Z0.
- **S12 = b1/a2 (a1 = 0):** reverse transmission coefficient (isolation).

Setting aₖ = 0 means port *k* is terminated in a matched load, so no wave is reflected back into the network.

**Properties:** reciprocal → S12 = S21; lossless → |S11|² + |S21|² = 1. Return loss = −20 log|S11| dB, insertion loss = −20 log|S21| dB, VSWR = (1 + |S11|)/(1 − |S11|).

**Example:** a transistor with |S21| = 3 has forward power gain |S21|² = 9 (9.54 dB) when both ports are matched to 50 Ω.

## Check yourself

The answer's key points as multiple-choice questions, with the correct option and why.

1. What do h-parameters and S-parameters relate respectively?
   A. Waves; voltages and currents
   B. Voltages and currents; incident and reflected waves
   C. Power; impedance
   D. Both use incident and reflected waves
   Answer: B. h-parameters are hybrid mixes of V and I for low frequency. S-parameters relate incident and reflected waves for RF and microwave. (Key point: Variables used)

2. Which is the measurement condition for S-parameters?
   A. Output shorted or input open
   B. All other ports matched to Z0
   C. All ports open-circuited
   D. All ports shorted
   Answer: B. h-parameters need V2 = 0 or I1 = 0, whereas S-parameters need matched terminations. (Key point: Measurement condition)

3. S21 of a two-port is defined as
   A. b1/a1 with a2 = 0
   B. b2/a1 with a2 = 0
   C. b1/a2 with a1 = 0
   D. b2/a2 with a1 = 0
   Answer: B. S21 is the forward transmission coefficient, the output wave b2 divided by input wave a1 with the output matched. (Key point: S21 meaning)

4. A transistor has |S21| = 3 with matched ports. Its forward power gain is
   A. 3 (4.77 dB)
   B. 9 (9.54 dB)
   C. 6 (7.8 dB)
   D. 1.73 (2.4 dB)
   Answer: B. Power gain is |S21|^2 = 9, which is 9.54 dB. (Key point: Gain from S21)

## Related in RF and Microwave Engineering

- [Two-port network model and parameters](https://www.bctengineer.com/question.md?key=semester_7%2Frf_and_microwave_engineering%3Atwo-port-network-model) — RF and Microwave Engineering, chapter 3
- [Importance of S-parameters and two-port derivation](https://www.bctengineer.com/question.md?key=semester_7%2Frf_and_microwave_engineering%3As-parameters-two-port-derivation) — RF and Microwave Engineering, chapter 3, asked 3×
- [S-parameters and three-port network S-matrix](https://www.bctengineer.com/question.md?key=semester_7%2Frf_and_microwave_engineering%3As-matrix-three-port-network) — RF and Microwave Engineering, chapter 3, asked 4×
- [Three-port S-parameters, return and insertion loss](https://www.bctengineer.com/question.md?key=semester_7%2Frf_and_microwave_engineering%3As-parameters-three-port-return-loss) — RF and Microwave Engineering, chapter 3
- [Three-port directional coupler using S-parameters](https://www.bctengineer.com/question.md?key=semester_7%2Frf_and_microwave_engineering%3Adirectional-coupler-three-port) — RF and Microwave Engineering, chapter 4
- [Compare two S-matrix sets; stability and gains](https://www.bctengineer.com/question.md?key=semester_7%2Frf_and_microwave_engineering%3Aamplifier-two-s-matrix-sets) — RF and Microwave Engineering, chapter 6

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