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Si polarizability, local field and resonant frequency

Short answer

Use Clausius-Mossotti: α_e = (3ε0/N)(εr-1)/(εr+2) = 4.17×10⁻⁴⁰ F m². Local field E_loc = (εr+2)/3 E = 4.63E. Resonant frequency ω0 = √(Ze²/(m_eα_e)) = 1.64×10¹⁶ rad/s (f0 ≈ 2.6×10¹⁵ Hz).

Determine electronic polarizability due to valence electrons per Si-atoms. If the sample is supplied by a voltage on its electrode, by how much is the local field greater than the applied field? Also determine the resonant frequency. Take εr = 11.9 and number of Si-atoms per unit volume = 5×10²⁸ m⁻³.

Silicon is a covalent, non-polar crystal, so its permittivity comes only from electronic polarization of the valence electrons. Use the Clausius-Mossotti equation and the Lorentz local field.

Given: εr=11.9\varepsilon_r = 11.9, N=5×1028 m−3N = 5 \times 10^{28}\ \text{m}^{-3}, ε0=8.854×10−12 F/m\varepsilon_0 = 8.854 \times 10^{-12}\ \text{F/m}. Each Si atom has Z=4Z = 4 valence electrons.

Electronic polarizability per Si atom

εr−1εr+2=Nαe3ε0  ⇒  αe=3ε0N⋅εr−1εr+2\frac{\varepsilon_r - 1}{\varepsilon_r + 2} = \frac{N\alpha_e}{3\varepsilon_0} \;\Rightarrow\; \alpha_e = \frac{3\varepsilon_0}{N}\cdot\frac{\varepsilon_r - 1}{\varepsilon_r + 2} αe=3×8.854×10−125×1028×10.913.9=4.17×10−40 F m2\alpha_e = \frac{3 \times 8.854 \times 10^{-12}}{5 \times 10^{28}} \times \frac{10.9}{13.9} = 4.17 \times 10^{-40}\ \text{F m}^2

Local field versus applied field

Lorentz field: Eloc=E+P3ε0E_{loc} = E + \dfrac{P}{3\varepsilon_0} with P=ε0(εr−1)EP = \varepsilon_0(\varepsilon_r - 1)E:

Eloc=E+(εr−1)E3=εr+23E=13.93E=4.63EE_{loc} = E + \frac{(\varepsilon_r - 1)E}{3} = \frac{\varepsilon_r + 2}{3}E = \frac{13.9}{3}E = 4.63E

So the local field is about 4.63 times the applied field (greater by 3.63E3.63E).

Resonant frequency

In the simple model the electron cloud (ZeZe, mass ZmeZm_e) is bound to the nucleus by a spring, and

αe=Ze2meω02  ⇒  ω0=Ze2meαe\alpha_e = \frac{Ze^2}{m_e\omega_0^2} \;\Rightarrow\; \omega_0 = \sqrt{\frac{Ze^2}{m_e\alpha_e}} ω0=4×(1.602×10−19)29.109×10−31×4.17×10−40=1.64×1016 rad/s\omega_0 = \sqrt{\frac{4 \times (1.602 \times 10^{-19})^2}{9.109 \times 10^{-31} \times 4.17 \times 10^{-40}}} = 1.64 \times 10^{16}\ \text{rad/s} f0=ω02π=2.62×1015 Hzf_0 = \frac{\omega_0}{2\pi} = 2.62 \times 10^{15}\ \text{Hz}

This lies in the ultraviolet region, so electronic polarization in Si follows the field up to optical frequencies.

Answer: αe=4.17×10−40 F m2\alpha_e = 4.17 \times 10^{-40}\ \text{F m}^2; Eloc=4.63EE_{loc} = 4.63E; ω0=1.64×1016 rad/s\omega_0 = 1.64 \times 10^{16}\ \text{rad/s} (f0≈2.6×1015f_0 \approx 2.6 \times 10^{15} Hz, taking Z=4Z = 4).

✓ Answer checked by Claude Opus 5.5 (high effort)

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