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Si polarizability, local field and resonant frequency
Short answer
Use Clausius-Mossotti: α_e = (3ε0/N)(εr-1)/(εr+2) = 4.17×10⁻⁴⁰ F m². Local field E_loc = (εr+2)/3 E = 4.63E. Resonant frequency ω0 = √(Ze²/(m_eα_e)) = 1.64×10¹⁶ rad/s (f0 ≈ 2.6×10¹⁵ Hz).
Determine electronic polarizability due to valence electrons per Si-atoms. If the sample is supplied by a voltage on its electrode, by how much is the local field greater than the applied field? Also determine the resonant frequency. Take εr = 11.9 and number of Si-atoms per unit volume = 5×10²⁸ m⁻³.
Silicon is a covalent, non-polar crystal, so its permittivity comes only from electronic polarization of the valence electrons. Use the Clausius-Mossotti equation and the Lorentz local field.
Given: , , . Each Si atom has valence electrons.
Electronic polarizability per Si atom
Local field versus applied field
Lorentz field: with :
So the local field is about 4.63 times the applied field (greater by ).
Resonant frequency
In the simple model the electron cloud (, mass ) is bound to the nucleus by a spring, and
This lies in the ultraviolet region, so electronic polarization in Si follows the field up to optical frequencies.
Answer: ; ; ( Hz, taking ).
✓ Answer checked by Claude Opus 5.5 (high effort)
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