- 2080 Bhadra · 10 marks
GaAs MESFET at 10 GHz: stability and gains
Short answer
K=1.306, |Δ|=0.094, so the device is unconditionally stable. Unilateral maximum transducer gain is 16.21 dB; bilateral maximum available gain is 17.49 dB.
A GaAs MESFET has the following S-parameters measured with a 50Ω resistance at 10 GHz: S11 = 0.55∠−160°, S12 = 0.04∠10°, S21 = 4.82∠180°, S22 = 0.45∠−30°. Determine the stability and compare maximum power gains for unilateral and bilateral modes using supplied formulas.
Stability is checked with the Rollett factor K and |Δ|. Then the maximum gain is compared for the unilateral case (S12 = 0) and the bilateral case (simultaneous conjugate match).
Given (10 GHz, 50 Ω): S11 = 0.55∠−160°, S12 = 0.04∠10°, S21 = 4.82∠180°, S22 = 0.45∠−30°.
Δ = S11·S22 − S12·S21
K = (1 − |S11|² − |S22|² + |Δ|²) / (2|S12·S21|)
Unconditionally stable if K > 1 and |Δ| < 1
GTU,max = [1/(1−|S11|²)]·|S21|²·[1/(1−|S22|²)]
Gmax (MAG) = (|S21|/|S12|)·(K − √(K² − 1))
Stability
S11·S22 = 0.2475∠170.0° = −0.2437 + j0.0430
S12·S21 = 0.1928∠−170.0° = −0.1899 − j0.0335
Δ = S11·S22 − S12·S21 = −0.0539 + j0.0765
= 0.0935∠125.2°, |Δ|² = 0.0087
K = (1 − |S11|² − |S22|² + |Δ|²) / (2|S12·S21|)
= (1 − 0.3025 − 0.2025 + 0.0087) / (2 × 0.1928)
= 0.5037 / 0.3856
= 1.306
Check with the single test μ = (1 − |S11|²) / (|S22 − Δ·S11*| + |S12·S21|) = 1.147 (> 1, unconditionally stable).
K = 1.306 > 1 and |Δ| = 0.094 < 1, so the MESFET is unconditionally stable at 10 GHz.
Unilateral mode
Unilateral (S12 = 0, ΓS = S11*, ΓL = S22*):
GS = 1/(1 − |S11|²) = 1/(1 − 0.3025)
= 1.4337 (1.56 dB)
G0 = |S21|² = 4.820² = 23.2324 (13.66 dB)
GL = 1/(1 − |S22|²) = 1/(1 − 0.2025)
= 1.2539 (0.98 dB)
GTU,max = GS·G0·GL = 41.766 (16.21 dB)
Bilateral mode
Bilateral (S12 kept), simultaneous conjugate match:
MAG = Gmax = (|S21|/|S12|)·(K − √(K² − 1))
= (4.820/0.040) × (1.306 − √(1.306² − 1))
= 120.500 × 0.4658
= 56.124 (17.49 dB)
Matching terminations: ΓS = 0.7362∠156.7°, ΓL = 0.6831∠25.0°.
Error of the unilateral assumption
U = |S11·S12·S21·S22| / [(1 − |S11|²)(1 − |S22|²)]
= 0.0858
1/(1+U)² < GT/GTU < 1/(1−U)²
−0.71 dB < error < +0.78 dB
Comparison
| Mode | Max gain | dB |
|---|---|---|
| Unilateral GTU,max | 41.77 | 16.21 dB |
| Bilateral Gmax | 56.12 | 17.49 dB |
The bilateral gain is 1.28 dB higher. This is larger than the upper unilateral error bound (+0.78 dB), because the large S21 = 4.82 makes the feedback through S12 significant (U = 0.0858). So the bilateral design should be used for accurate results.
Answer: K = 1.306, |Δ| = 0.094 → unconditionally stable; GTU,max = 16.21 dB, Gmax = 17.49 dB.
✓ Answer checked by Claude Opus 5.5 (high effort)
Related questions
- GaAs FET at 5 GHz: stability and max gain · RF and Microwave Engineering, chapter 6 · asked 2×
- Stability and unilateral gain, S11 = 0.45∠−160° · RF and Microwave Engineering, chapter 6
- Max gains for S11 = 0.55∠150° (2071 Bhadra) · RF and Microwave Engineering, chapter 6
- Max gains for S11 = 0.55∠−150° transistor · RF and Microwave Engineering, chapter 6 · asked 2×
- Stability and gains for S21 = 10.11∠91° · RF and Microwave Engineering, chapter 6
- Compare two S-matrix sets; stability and gains · RF and Microwave Engineering, chapter 6
- AVL tree for 10 20 30 50 45 40 8 5 3 · Data Structure and Algorithm, chapter 6
- Received power: 50 km, 10 GHz link · Propagation and Antenna, chapter 5 · asked 2×