- 2072 Kartik · 6 marks
Transmission through CuO layer (5 eV, 1 nm)
Short answer
Applying T ≈ 16(E/V₀)(1−E/V₀) exp(−2√[2m(V₀−E)] a/ħ) for E=5eV, V₀=10eV: α≈1.14×10¹⁰ m⁻¹. For a=3nm, T ≈ 6.1×10⁻³⁰; for a=1nm, T ≈ 4.6×10⁻¹⁰.
A 3nm thick oxide layer of CuO separates two copper conductors providing a barrier height of 10eV for the conduction of electrons in copper. Determine the transmission coefficient if the energy of electron is 5eV. What will be the new transmission coefficient if the thickness of CuO was reduced to 1nm.
The CuO layer is a rectangular barrier. The transmission (tunneling) coefficient for and a wide barrier is
Given: eV, eV, nm, nm, kg, J s.
Decay constant
(a) Thickness 3 nm
(b) Thickness 1 nm
| Oxide thickness | ||
|---|---|---|
| 3 nm | 68.65 | |
| 1 nm | 22.88 |
Answer: for 3 nm and for 1 nm. (Without the prefactor: and .)
Reducing the thickness to one third increases the transmission by a factor of about , showing the very strong (exponential) dependence of tunneling on barrier width.
✓ Answer checked by Claude Opus 5.5 (high effort)
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