- 2081 Baisakh · 6+3+3 marks
Bilateral/unilateral gains and design flow chart
Short answer
K=2.290 and |Δ|=0.147, so the transistor is unconditionally stable. Unilateral maximum gain GTU,max=1/(1−|S11|²)·|S21|²·1/(1−|S22|²)=14.30 (11.55 dB); bilateral MAG=(|S21|/|S12|)(K−√(K²−1))=16.21 (12.10 dB).
Calculate the maximum gains of both bilateral and unilateral models of a transistor having the S-parameters of S11 = 0.55∠−150°, S12 = 0.04∠20°, S21 = 2.82∠180° and S22 = 0.45∠−30°. Sketch a flow chart that describes the microwave amplifier designing procedure.
The maximum gains are found after checking stability. The unilateral model ignores S12, and the bilateral model includes it (simultaneous conjugate match).
Given: S11 = 0.55∠−150°, S12 = 0.04∠20°, S21 = 2.82∠180°, S22 = 0.45∠−30°.
Δ = S11·S22 − S12·S21
K = (1 − |S11|² − |S22|² + |Δ|²) / (2|S12·S21|)
Unconditionally stable if K > 1 and |Δ| < 1
GTU,max = [1/(1−|S11|²)]·|S21|²·[1/(1−|S22|²)]
Gmax (MAG) = (|S21|/|S12|)·(K − √(K² − 1))
Stability (needed before gain)
S11·S22 = 0.2475∠180.0° = −0.2475 + j0.0000
S12·S21 = 0.1128∠−160.0° = −0.1060 − j0.0386
Δ = S11·S22 − S12·S21 = −0.1415 + j0.0386
= 0.1467∠164.7°, |Δ|² = 0.0215
K = (1 − |S11|² − |S22|² + |Δ|²) / (2|S12·S21|)
= (1 − 0.3025 − 0.2025 + 0.0215) / (2 × 0.1128)
= 0.5165 / 0.2256
= 2.290
K = 2.290 > 1 and |Δ| = 0.147 < 1, so the transistor is unconditionally stable. Maximum gains therefore exist.
Unilateral model (S12 = 0)
Unilateral (S12 = 0, ΓS = S11*, ΓL = S22*):
GS = 1/(1 − |S11|²) = 1/(1 − 0.3025)
= 1.4337 (1.56 dB)
G0 = |S21|² = 2.820² = 7.9524 (9.00 dB)
GL = 1/(1 − |S22|²) = 1/(1 − 0.2025)
= 1.2539 (0.98 dB)
GTU,max = GS·G0·GL = 14.296 (11.55 dB)
Bilateral model
Bilateral (S12 kept), simultaneous conjugate match:
MAG = Gmax = (|S21|/|S12|)·(K − √(K² − 1))
= (2.820/0.040) × (2.290 − √(2.290² − 1))
= 70.500 × 0.2299
= 16.210 (12.10 dB)
The source and load terminations for this gain are ΓS = 0.6307∠148.0° and ΓL = 0.5551∠26.7°.
| Model | Max gain | dB |
|---|---|---|
| Unilateral GTU,max | 14.296 | 11.55 |
| Bilateral Gmax | 16.210 | 12.10 |
The bilateral gain is 0.55 dB higher. The unilateral figure of merit U = 0.0502 gives an error range of −0.43 to +0.45 dB, so the unilateral model is a reasonable approximation.
Answer: GTU,max = 11.55 dB (unilateral), Gmax = 12.10 dB (bilateral).
Flow chart of microwave amplifier design
[ Start: specs f, G, NF ]
|
[ Select transistor, bias; get S ]
|
[ Compute Δ, K (or μ) ]
|
< K>1 and |Δ|<1 ? >
| yes | no
| [ Draw stability circles ]
| [ choose ΓS, ΓL in stable ]
| [ region / add loading ]
| |
< U small (S12≈0)? > |
| yes | no |
[ΓS=S11*, [ΓS=ΓMS, |
ΓL=S22*] ΓL=ΓML] |
|____________|______|
|
[ Design input/output matching ]
[ networks (Smith chart, stubs) ]
|
[ Bias network, layout, simulate ]
|
< Specs met? > -- no -> retune
| yes
[ End ]
✓ Answer checked by Claude Opus 5.5 (high effort)
Related questions
- Max gains for S11 = 0.55∠−150° transistor · RF and Microwave Engineering, chapter 6 · asked 2×
- Max gains for S11 = 0.55∠150° (2071 Bhadra) · RF and Microwave Engineering, chapter 6
- Stability and unilateral gain, S11 = 0.45∠−160° · RF and Microwave Engineering, chapter 6
- Stability and gains for S21 = 10.11∠91° · RF and Microwave Engineering, chapter 6
- Stability and gains for S11 = 0.894∠−60.6° · RF and Microwave Engineering, chapter 6
- GaAs MESFET at 10 GHz: stability and gains · RF and Microwave Engineering, chapter 6