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Built-in potential and depletion width defined

Short answer

Built-in potential V0 = (kT/e) ln(N_aN_d/n_i^2) arises from diffusion of carriers across a pn junction, leaving fixed ion charges. Depletion width W0 = sqrt(2ε(N_a+N_d)V0/(e N_a N_d)) spans the space-charge region devoid of mobile carriers.

What is Built-in potential and depletion width? Derive the expression of these with necessary diagram.

When p-type and n-type regions meet, electrons diffuse from n to p and holes from p to n. They recombine near the junction and leave behind uncovered fixed ions: negative acceptor ions on the p side and positive donor ions on the n side. This region, empty of mobile carriers, is the depletion (space-charge) region, and its width W0=Wp+WnW_0 = W_p + W_n is the depletion width. The ions create an electric field and a potential difference V0V_0 across the region, called the built-in potential; it stops further diffusion.

   p side        |  W0  |       n side
  o o o o o  | - - | + + |  * * * * *
  holes      | - - | + + |  electrons
             |<Wp>|<-Wn->|
  field E0  <-----------
  potential: 0 ____/^^^^^ V0

Built-in potential

In equilibrium the Fermi level is flat. Far from the junction:

pp0=Na,pn0=ni2Ndp_{p0} = N_a,\qquad p_{n0} = \frac{n_i^2}{N_d}

The hole concentrations on the two sides are related by the Boltzmann factor of the potential energy step eV0eV_0:

pn0pp0=exp⁡(−eV0kT)\frac{p_{n0}}{p_{p0}} = \exp\left(-\frac{eV_0}{kT}\right)

Hence

V0=kTeln⁡pp0pn0=kTeln⁡NaNdni2V_0 = \frac{kT}{e}\ln\frac{p_{p0}}{p_{n0}} = \frac{kT}{e}\ln\frac{N_aN_d}{n_i^2}

(The same result follows from equating the drift and diffusion currents of holes, using the Einstein relation.)

Depletion width

1. Charge neutrality: eNaWp=eNdWneN_aW_p = eN_dW_n.

2. Field from Gauss's law (Poisson's equation): the field rises linearly through each charged layer and peaks at the junction:

E0=−eNdWnε=−eNaWpε,ε=ε0εr\mathcal{E}_0 = -\frac{eN_dW_n}{\varepsilon} = -\frac{eN_aW_p}{\varepsilon},\qquad \varepsilon = \varepsilon_0\varepsilon_r

3. Potential = area under the field triangle:

V0=12∣E0∣W0=eNdWnW02εV_0 = \frac{1}{2}|\mathcal{E}_0|W_0 = \frac{eN_dW_nW_0}{2\varepsilon}

4. Eliminate WnW_n: from step 1, Wn=W0NaNa+NdW_n = W_0\dfrac{N_a}{N_a+N_d}, so

V0=eW022ε⋅NaNdNa+NdV_0 = \frac{eW_0^2}{2\varepsilon}\cdot\frac{N_aN_d}{N_a+N_d} W0=2ε(Na+Nd)V0eNaNdW_0 = \sqrt{\frac{2\varepsilon(N_a+N_d)V_0}{eN_aN_d}}

with Wn=W0Na/(Na+Nd)W_n = W_0N_a/(N_a+N_d) and Wp=W0Nd/(Na+Nd)W_p = W_0N_d/(N_a+N_d). The depletion layer extends mostly into the lightly doped side. Under bias, V0V_0 is replaced by V0−VV_0 - V.

✓ Answer checked by Claude Opus 5.5 (high effort)

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