- Asked 4/28
- 2074 Chaitra · 6 marks
Built-in potential and depletion width defined
Short answer
Built-in potential V0 = (kT/e) ln(N_aN_d/n_i^2) arises from diffusion of carriers across a pn junction, leaving fixed ion charges. Depletion width W0 = sqrt(2ε(N_a+N_d)V0/(e N_a N_d)) spans the space-charge region devoid of mobile carriers.
What is Built-in potential and depletion width? Derive the expression of these with necessary diagram.
When p-type and n-type regions meet, electrons diffuse from n to p and holes from p to n. They recombine near the junction and leave behind uncovered fixed ions: negative acceptor ions on the p side and positive donor ions on the n side. This region, empty of mobile carriers, is the depletion (space-charge) region, and its width is the depletion width. The ions create an electric field and a potential difference across the region, called the built-in potential; it stops further diffusion.
p side | W0 | n side
o o o o o | - - | + + | * * * * *
holes | - - | + + | electrons
|<Wp>|<-Wn->|
field E0 <-----------
potential: 0 ____/^^^^^ V0
Built-in potential
In equilibrium the Fermi level is flat. Far from the junction:
The hole concentrations on the two sides are related by the Boltzmann factor of the potential energy step :
Hence
(The same result follows from equating the drift and diffusion currents of holes, using the Einstein relation.)
Depletion width
1. Charge neutrality: .
2. Field from Gauss's law (Poisson's equation): the field rises linearly through each charged layer and peaks at the junction:
3. Potential = area under the field triangle:
4. Eliminate : from step 1, , so
with and . The depletion layer extends mostly into the lightly doped side. Under bias, is replaced by .
✓ Answer checked by Claude Opus 5.5 (high effort)
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