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Built-in potential and depletion width derivation

Short answer

Built-in potential V0 = (kT/e) ln(Na Nd / ni^2). Using charge neutrality Na Wp = Nd Wn, Poisson's equation, and V0 = (1/2)|E0|W, the total depletion width is W = sqrt[2ε(Na+Nd)V0/(e Na Nd)], with Wn = Na W/(Na+Nd) and Wp = Nd W/(Na+Nd).

Derive the expression of a built-in potential and depletion width of a pn junction with necessary diagrams.

Built-in potential

Consider an abrupt pn junction with acceptor concentration NaN_a on the p-side and donor concentration NdN_d on the n-side. Assumptions: abrupt junction, full ionisation, non-degenerate doping, depletion approximation (no free carriers in the depletion region), equilibrium.

When the two sides are joined, holes diffuse from p to n and electrons from n to p. They leave behind uncovered negative acceptor ions on the p-side and positive donor ions on the n-side. These form a space charge (depletion) region whose field opposes further diffusion. In equilibrium the Fermi level is constant through the junction and the bands bend by eV0eV_0.

        p-side  |  depletion  |  n-side
                | -Wp  0  +Wn |
  Ec ___________
                \_____________
  EF ............................. (flat)
  Ev ___________   eV0
                \_____________

In equilibrium, carrier concentrations at the two ends of the depletion region follow the Boltzmann factor:

pp0pn0=exp⁡(eV0kT)\frac{p_{p0}}{p_{n0}} = \exp\left(\frac{eV_0}{kT}\right)

With pp0=Nap_{p0} = N_a and pn0=ni2/Ndp_{n0} = n_i^2/N_d:

NaNdni2=exp⁡(eV0kT)V0=kTeln⁡(NaNdni2)\begin{aligned} \frac{N_a N_d}{n_i^2} &= \exp\left(\frac{eV_0}{kT}\right) \\ V_0 &= \frac{kT}{e}\ln\left(\frac{N_a N_d}{n_i^2}\right) \end{aligned}

(The same result follows from eV0=EFn−EFpeV_0 = E_{Fn} - E_{Fp} before contact, using EFn−EFi=kTln⁡(Nd/ni)E_{Fn} - E_{Fi} = kT\ln(N_d/n_i) and EFi−EFp=kTln⁡(Na/ni)E_{Fi} - E_{Fp} = kT\ln(N_a/n_i).)

Depletion width

Charge density: ρ=−eNa\rho = -eN_a for −Wp<x<0-W_p < x < 0 and ρ=+eNd\rho = +eN_d for 0<x<Wn0 < x < W_n.

  rho
  +eNd     +-----+
           |     |
 ---+------+-----+--- x
 -Wp|   0        Wn
    +------+
  -eNa
  1. Charge neutrality:
NaWp=NdWnN_a W_p = N_d W_n
  1. Poisson's equation: dEdx=ρε\dfrac{dE}{dx} = \dfrac{\rho}{\varepsilon}, with ε=ε0εr\varepsilon = \varepsilon_0\varepsilon_r. Integrating from −Wp-W_p (where E=0E = 0) gives a field that is maximum at the junction:
E0=−eNdWnε=−eNaWpεE_0 = -\frac{eN_d W_n}{\varepsilon} = -\frac{eN_a W_p}{\varepsilon}
  1. Potential: V0V_0 is the area under the triangular field plot:
V0=−12E0W=eNdWnW2ε,W=Wn+WpV_0 = -\frac{1}{2}E_0 W = \frac{eN_d W_n W}{2\varepsilon}, \quad W = W_n + W_p
  1. From neutrality, Wn=NaWNa+NdW_n = \dfrac{N_a W}{N_a + N_d}. Substituting:
V0=eNaNdW22ε(Na+Nd)W=2ε(Na+Nd)V0eNaNd\begin{aligned} V_0 &= \frac{e N_a N_d W^2}{2\varepsilon (N_a + N_d)} \\ W &= \sqrt{\frac{2\varepsilon (N_a + N_d) V_0}{e N_a N_d}} \end{aligned}
   E(x)
  ---+-----------+---- x
  -Wp \         / Wn
       \       /
        \     /
         \   /
          \ /
          -E0

The depletion region extends mostly into the lightly doped side (Wn/Wp=Na/NdW_n/W_p = N_a/N_d). With reverse bias VrV_r, replace V0V_0 by V0+VrV_0 + V_r.

✓ Answer checked by Claude Opus 5.5 (high effort)

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