Skip to main content

Diffusion coefficient and diffusion current density

Short answer

Using Einstein relation, D_e = μ_e kT/e = 1350×0.02585 = 34.9 cm^2/s. Diffusion current density J = e D_e (dn/dx) = 1.6×10^-19×34.9×10^3 = 5.6×10^-15 A/cm^2 for a gradient of 10^3 cm^-4.

Calculate the diffusion coefficient of electrons at 300K in n-type silicon semiconductor. Also find current density if electron concentration gradient is 10³ electrons per centimeter.

The diffusion coefficient follows from the Einstein relation

Deμe=kTe\frac{D_e}{\mu_e} = \frac{kT}{e}

Data used: electron mobility in Si μe=1350 cm2V−1s−1\mu_e = 1350\ \text{cm}^2\text{V}^{-1}\text{s}^{-1} (not given, standard value), T=300T = 300 K, kT/e=0.02585kT/e = 0.02585 V.

Diffusion coefficient

De=μekTe=1350×0.02585=34.9 cm2s−1\begin{aligned} D_e &= \mu_e\frac{kT}{e} = 1350\times0.02585\\ &= 34.9\ \text{cm}^2\text{s}^{-1} \end{aligned}

Diffusion current density

The gradient "10310^3 electrons per centimetre" is read as dn/dx=103 cm−3dn/dx = 10^{3}\ \text{cm}^{-3} per cm =103 cm−4= 10^3\ \text{cm}^{-4}.

Jdiff=eDedndx=1.6×10−19×34.9×103=5.58×10−15 A cm−2\begin{aligned} J_{diff} &= eD_e\frac{dn}{dx}\\ &= 1.6\times10^{-19}\times34.9\times10^{3}\\ &= 5.58\times10^{-15}\ \text{A cm}^{-2} \end{aligned}

Answer: De≈34.9 cm2s−1D_e \approx 34.9\ \text{cm}^2\text{s}^{-1} (3.49×10−3 m2s−13.49\times10^{-3}\ \text{m}^2\text{s}^{-1}); J≈5.6×10−15 A cm−2J \approx 5.6\times10^{-15}\ \text{A cm}^{-2}.

The current is tiny because the given gradient is extremely small; JJ is directly proportional to dn/dxdn/dx, so a realistic gradient such as 1020 cm−410^{20}\ \text{cm}^{-4} would give J≈560 A cm−2J \approx 560\ \text{A cm}^{-2}. The current flows in the direction of increasing nn (electrons diffuse the other way, and their charge is negative).

✓ Answer checked by Claude Opus 5.5 (high effort)

All Electrical Engineering Material chapter 6 questions →