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Population density and temperature-independent Fermi energy

Short answer

Population density n_E(E) = g(E)f(E) is the number of electrons per unit volume per unit energy. At 0 K, integration gives E_{F0} = (h²/8m_e)(3n/π)^{2/3}, depending only on n. For T>0, the Sommerfeld expansion yields E_F(T) = E_{F0}[1 − (π²/12)(kT/E_{F0})²]; the correction is ~10⁻⁵, so E_F is essentially temperature independent.

Define population density. Prove that fermi energy in a metal is independent of temperature and depends only in its electron concentration.

Population density

The population density nE(E)n_E(E) is the number of electrons per unit volume per unit energy at energy EE. It is the product of the number of available states and the probability that they are occupied:

nE(E)=g(E) f(E),g(E)=8π2 me3/2h3E1/2,f(E)=11+e(E−EF)/kTn_E(E) = g(E)\, f(E), \qquad g(E) = \frac{8\pi\sqrt{2}\, m_e^{3/2}}{h^3} E^{1/2}, \quad f(E) = \frac{1}{1 + e^{(E-E_F)/kT}}

The area under the nEn_E versus EE curve gives the total electron concentration nn.

 nE(E)
  ^        T=0: sharp cut at EF
  |      ..---.
  |   .-'      |\  <- T>0: small tail
  |  /         | \
  | /          |  '..
  |/___________|______> E
  0            EF

Fermi energy depends only on n

At T=0T = 0 K, f(E)=1f(E) = 1 for E<EF0E < E_{F0} and 00 above it. Hence

n=∫0EF0g(E) dE=8π2 me3/2h3⋅23EF03/2=8π3(2meEF0h2)3/2n = \int_0^{E_{F0}} g(E)\, dE = \frac{8\pi\sqrt{2}\, m_e^{3/2}}{h^3} \cdot \frac{2}{3} E_{F0}^{3/2} = \frac{8\pi}{3}\left(\frac{2m_e E_{F0}}{h^2}\right)^{3/2}

Solving,

EF0=h28me(3nπ)2/3E_{F0} = \frac{h^2}{8m_e}\left(\frac{3n}{\pi}\right)^{2/3}

Thus EF0E_{F0} contains only constants and nn, the free electron concentration. A metal with more free electrons per volume has a higher Fermi energy (Cu, n=8.5×1028n = 8.5 \times 10^{28} m⁻³: 7.0 eV; Na, 2.5×10282.5 \times 10^{28}: 3.1 eV).

Temperature has almost no effect

At T>0T > 0, the electron number must stay the same:

n=∫0∞g(E)f(E) dEn = \int_0^{\infty} g(E) f(E)\, dE

Evaluating this integral (Sommerfeld expansion) gives

EF(T)=EF0[1−π212(kTEF0)2]E_F(T) = E_{F0}\left[1 - \frac{\pi^2}{12}\left(\frac{kT}{E_{F0}}\right)^2\right]

For copper at 300 K: kT=0.0259kT = 0.0259 eV, EF0=7.0E_{F0} = 7.0 eV, so kT/EF0=3.7×10−3kT/E_{F0} = 3.7 \times 10^{-3} and the correction is π212(3.7×10−3)2≈1.1×10−5\frac{\pi^2}{12}(3.7 \times 10^{-3})^2 \approx 1.1 \times 10^{-5}, a change of only about 0.001%.

Physical reason

Only electrons within a few kTkT of EFE_F can be thermally excited, because states deeper down have all their neighbouring states already filled (Pauli principle). Since kT≪EFkT \ll E_F, only a tiny fraction of electrons are disturbed, and the electrons moved above EFE_F match the holes left below EFE_F (the Fermi function is symmetric about EFE_F). Also nn in a metal does not change with TT. Hence the Fermi energy of a metal is practically independent of temperature and depends only on its electron concentration.

✓ Answer checked by Claude Opus 5.5 (high effort)

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