- 2076 Asoj · 8 marks
p-type minority carrier suppression and conductivity
Short answer
p-type: doped with acceptors, majority holes. From np = n_i² and p ≈ N_a, minority electron concentration n = n_i²/N_a ≪ n_i (suppression). Conductivity σ ≈ e N_a μ_h, because hole term dominates; electron contribution is negligible.
Define p-type semiconductor. Derive an expression for minority carrier suppression and hence prove that the conductivity in p-type semiconductor is mainly due to the hole.
A p-type semiconductor is an intrinsic semiconductor (Si, Ge) doped with a small amount of a trivalent (group III) impurity such as boron, aluminium, gallium or indium. Each impurity atom forms only three covalent bonds, so one bond is incomplete; it easily accepts an electron from the valence band, creating a hole. Such impurities are called acceptors (). Holes are the majority carriers and electrons the minority carriers.
Ec ------------------------
EFi - - - - - - - - - - - -
EFp .......................
Ea - o - o - o - (acceptors, ~0.05 eV)
Ev ------------------------
Derivation of minority carrier suppression
1. Mass action law. In equilibrium, for any non-degenerate semiconductor,
2. Charge neutrality. Positive charges = negative charges:
At room temperature all acceptors are ionised, .
3. Solve. Put :
For normal doping , so
4. Suppression. Compare with the intrinsic value:
Adding acceptors raises above by the factor and lowers below by the same factor. The extra holes recombine with the thermally generated electrons. This reduction of the minority electron concentration is called minority carrier suppression.
Example: Si with : , .
Conductivity is due to holes
Ratio of the two terms:
For the example: . Even though , the electron term is negligible, so
Hence the conductivity of a p-type semiconductor is almost entirely due to holes and is fixed by the acceptor concentration.
✓ Answer checked by Claude Opus 5.5 (high effort)
Related questions
- Minority suppression and donor-defined conduction · Electrical Engineering Material, chapter 6
- Minority charge suppression in extrinsic semiconductors · Electrical Engineering Material, chapter 6 · asked 2×
- Compensated semiconductor concentrations and conductivity · Electrical Engineering Material, chapter 6
- Compensated semiconductor: electron and hole concentrations · Electrical Engineering Material, chapter 6 · asked 4×
- Minority carriers suppressed in n-type · Electrical Engineering Material, chapter 6
- Intrinsic Fermi level of pure semiconductor · Electrical Engineering Material, chapter 6
- Derive expression for tile drain spacing · Irrigation and Drainage Engineering, chapter 9 · asked 8×
- Derive development length expression · Design of RCC Structure, chapter 6 · asked 6×
- Derive PET expression by Penman's method · Engineering Hydrology, chapter 3
- Analytical resection, derive coordinate expression · Surveying II, chapter 5