- 2071 Shrawan · 8 marks
Minority suppression and donor-defined conduction
Short answer
Minority carrier suppression is the reduction of minority carriers below n_i due to doping, from np = n_i². In n-type, charge neutrality n = p+N_d and N_d >> n_i yields n ≈ N_d, p = n_i²/N_d. Conductivity σ ≈ e N_d μ_e, controlled by donors.
What is minority carrier suppression? Prove electron concentration and conduction in n-type semiconductor is defined by impurity donor.
Minority carrier suppression is the reduction of the minority carrier concentration below the intrinsic value when a semiconductor is doped. In n-type material the holes are suppressed; in p-type the electrons are suppressed. It follows from the mass action law : if doping raises one carrier type, the other must fall in the same ratio.
Proof for n-type semiconductor
Consider Si doped with donors per cm³ (P, As, Sb). Each donor level lies about 0.05 eV below , so at room temperature practically all donors are ionised: .
Ec -------------------------
Ed - * - * - * - (donors, ~0.05 eV)
EFn ........................
EFi - - - - - - - - - - - - -
Ev -------------------------
1. Charge neutrality:
2. Mass action law (thermal equilibrium):
3. Solve: substitute :
4. Normal doping, :
So the electron concentration is fixed by the donor concentration only, not by temperature or band gap, and the holes are suppressed by the factor .
Conduction is defined by the donors
The ratio of the hole term to the electron term is , which is tiny. Hence
Example: Si with : , cm⁻³; hole/electron current ratio . S cm⁻¹.
Conclusions
- Electron concentration (donor defined).
- Conductivity (donor defined), and it can be set accurately by controlling the doping.
- This holds over the extrinsic range of temperature; at very high T, becomes comparable to and the material turns intrinsic.
✓ Answer checked by Claude Opus 5.5 (high effort)
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