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Degenerate versus non-degenerate semiconductors
Short answer
Non-degenerate semiconductors have doping low enough that the Fermi level lies in the band gap (more than a few kT from band edges), with n ≪ Nc, p ≪ Nv, and Boltzmann statistics apply. Degenerate semiconductors are so heavily doped (≈10¹⁹ cm⁻³) that the Fermi level enters the conduction or valence band, impurity bands merge, and they show metal‑like conductivity; Fermi‑Dirac statistics must be used.
Differentiate between non-degenerate and degenerate semiconductors.
A non-degenerate semiconductor has a carrier concentration much smaller than the effective density of states (, ), so the Fermi level lies in the band gap at least a few from the band edges. A degenerate semiconductor is so heavily doped (above about cm in Si) that the Fermi level enters the conduction band (n) or valence band (p), and it behaves more like a metal.
Non-degenerate n Degenerate n+
---------- Ec ~~~~~~~~~~ EF
- - - - - Ed ---------- Ec
.......... EF ////////// impurity band
merged with CB
---------- Ev ---------- Ev
| Point | Non-degenerate | Degenerate |
|---|---|---|
| Doping level | Light/moderate () | Very heavy (, about to cm) |
| Fermi level | In the gap, more than about from band edge | Inside CB (n) or VB (p) |
| Statistics | Boltzmann approximation valid | Full Fermi-Dirac needed |
| Holds | Does not hold | |
| Impurity levels | Discrete, isolated donor/acceptor levels | Overlap into an impurity band merging with the band |
| Band gap | Normal | Slightly reduced (band-gap narrowing) |
| Behaviour | Semiconducting; conductivity rises with T | Metal-like; weak temperature dependence |
| Uses | Ordinary diodes, transistors | Tunnel diodes, laser diodes, ohmic contacts |
✓ Answer checked by Claude Opus 5.5 (high effort)
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