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Concept of effective mass in a crystal

Short answer

The effective mass m* = ħ²/(d²E/dk²) describes an electron's response to external forces, incorporating the lattice's periodic potential. It depends on the curvature of the E-k band: positive at band bottom, negative at top, and infinite at inflection points, enabling a free-particle-like description.

Explain the concept of effective mass in crystal with necessary mathematical expression.

The effective mass m∗m^* of an electron in a crystal is the mass it appears to have when it responds to an external force, after the effect of all the internal forces from the lattice ions and other electrons has been included in it. It lets us treat a crystal electron as if it were a free particle with mass m∗m^*.

Why it is needed

Inside a crystal an electron feels the external force FextF_{ext} (for example −eE-eE from an applied field) and also the internal periodic force FintF_{int} from the lattice. Newton's law gives

Fext+Fint=meaF_{ext} + F_{int} = m_e a

FintF_{int} is very complicated and changes from point to point. We therefore write

Fext=m∗aF_{ext} = m^* a

and put all the effect of the lattice into m∗m^*.

Expression for m∗m^*

The electron is a wave packet that moves with the group velocity

vg=dωdk=1ℏdEdkv_g = \frac{d\omega}{dk} = \frac{1}{\hbar}\frac{dE}{dk}

Its acceleration is

a=dvgdt=1ℏd2Edk2dkdta = \frac{dv_g}{dt} = \frac{1}{\hbar}\frac{d^2E}{dk^2}\frac{dk}{dt}

In time dtdt the external force does work dE=Fextvg dtdE = F_{ext}v_g\,dt, so dEdkdk=Fext1ℏdEdkdt\frac{dE}{dk}dk = F_{ext}\frac{1}{\hbar}\frac{dE}{dk}dt, giving

Fext=ℏdkdtF_{ext} = \hbar\frac{dk}{dt}

Substituting dk/dt=Fext/ℏdk/dt = F_{ext}/\hbar:

a=1ℏ2d2Edk2Fext⇒m∗=ℏ2d2E/dk2a = \frac{1}{\hbar^2}\frac{d^2E}{dk^2}F_{ext} \quad\Rightarrow\quad m^* = \frac{\hbar^2}{d^2E/dk^2}

Meaning

  • m∗m^* depends on the curvature of the E–k curve. A sharply curved band gives a small m∗m^* (light, fast electron); a flat band gives a large m∗m^*.
  • For a free electron E=ℏ2k2/2meE = \hbar^2k^2/2m_e, so d2E/dk2=ℏ2/med^2E/dk^2 = \hbar^2/m_e and m∗=mem^* = m_e.
  • Near the bottom of a band m∗m^* is positive; near the top it is negative (this is why holes are used); at the inflection point it is infinite.

Typical values

Materialme∗/mem_e^*/m_emh∗/mem_h^*/m_e
Si1.080.56
Ge0.550.37
GaAs0.0670.48

The small m∗m^* of electrons in GaAs is why GaAs devices are faster than Si devices.

✓ Answer checked by Claude Opus 5.5 (high effort)

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