Skip to main content

Einstein relation; mobility, conductivity, resistivity

Short answer

Equating drift and diffusion currents in equilibrium with flat Fermi level gives D/μ = kT/e. Mobility μ = v_d/E = eτ/m*, conductivity σ = e(nμ_n + pμ_p), resistivity ρ = 1/σ.

Derive Einstein's relation between mobility and diffusion co-efficient. Also define the terms electron mobility, conductivity and resistivity.

Einstein relation

The Einstein relation links the diffusion coefficient DD and the drift mobility μ\mu of a carrier: Dμ=kTe\dfrac{D}{\mu} = \dfrac{kT}{e}.

Derivation. Take a non-uniformly doped n-type bar in thermal equilibrium (no external voltage). The donor and electron concentration n(x)n(x) falls with xx.

 n(x) high ---> low
 ---------------------------
 |  diffusion: e- move ->   |
 |  field E builds up        |
 |  drift:   e- move <-     |
 ---------------------------
  1. Electrons diffuse from high to low concentration. Electron diffusion current density:
Jdiff=eDedndxJ_{diff} = eD_e\frac{dn}{dx}
  1. The donors left behind are positive, so a built-in field E\mathcal{E} appears; it causes a drift current
Jdrift=enμeEJ_{drift} = en\mu_e\mathcal{E}
  1. In equilibrium there is no net current:
enμeE+eDedndx=0en\mu_e\mathcal{E} + eD_e\frac{dn}{dx} = 0
  1. In equilibrium the Fermi level is flat, so n(x)=Ncexp⁡[−(Ec(x)−EF)/kT]n(x) = N_c\exp[-(E_c(x)-E_F)/kT] and
dndx=−nkTdEcdx\frac{dn}{dx} = -\frac{n}{kT}\frac{dE_c}{dx}
  1. The field bends the band: dEc/dx=eEdE_c/dx = e\mathcal{E}. Hence
dndx=−neEkT\frac{dn}{dx} = -\frac{ne\mathcal{E}}{kT}
  1. Substitute in step 3:
enμeE−eDeneEkT=0Deμe=kTe\begin{aligned} en\mu_e\mathcal{E} - eD_e\frac{ne\mathcal{E}}{kT} &= 0\\ \frac{D_e}{\mu_e} &= \frac{kT}{e} \end{aligned}

Similarly for holes Dh/μh=kT/eD_h/\mu_h = kT/e. At 300 K, kT/e=0.0259kT/e = 0.0259 V; e.g. for Si electrons De=1350×0.0259≈35 cm2s−1D_e = 1350\times0.0259 \approx 35\ \text{cm}^2\text{s}^{-1}.

Electron mobility

Drift mobility is the drift velocity per unit applied field:

μe=vdE=eτme∗\mu_e = \frac{v_d}{\mathcal{E}} = \frac{e\tau}{m_e^*}

Unit: m² V⁻¹ s⁻¹ (or cm² V⁻¹ s⁻¹). It shows how easily electrons move; it falls with lattice scattering (higher T) and impurity scattering (heavier doping).

Conductivity

Conductivity σ\sigma is the ratio of current density to electric field, J=σEJ = \sigma\mathcal{E}:

σ=e(nμe+pμh)\sigma = e(n\mu_e + p\mu_h)

Unit: S m⁻¹ (Ω⁻¹ m⁻¹).

Resistivity

Resistivity is the reciprocal of conductivity, i.e. the resistance of a unit cube of material:

ρ=1σ=RAL\rho = \frac{1}{\sigma} = \frac{RA}{L}

Unit: Ω m.

✓ Answer checked by Claude Opus 5.5 (high effort)

All Electrical Engineering Material chapter 6 questions →