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Derivation of tunneling probability through barrier

Short answer

Tunneling is a quantum effect where an electron with energy E penetrates a potential barrier of height V > E, classically forbidden. The transmission probability is T = [1 + V² sinh²(αL)/(4E(V−E))]⁻¹; for a wide barrier, T ≈ (16E(V−E)/V²) exp[−2L√(2m(V−E))/ħ].

What is tunneling phenomenon? Derive the expression for the probability of tunneling the potential barrier of width L and height V by electron.

Tunnelling is the quantum effect in which a particle with energy EE passes through a potential barrier of height V>EV > E, which is impossible in classical mechanics. It happens because the wave function does not drop to zero inside the barrier but decays exponentially; if the barrier is thin, some of the wave reaches the far side. Examples: tunnel diode, scanning tunnelling microscope, field emission, conduction through thin oxide layers on contacts.

 V(x)
  ^        __________
  |   V   |          |
  | E-----|- - - - - |-----
  | ~~~~~ | \_       | ~~~
  |  I    |  II \__  | III
  |_______|__________|_____> x
          0          L

Wave functions in three regions

Let k=2mEℏk = \dfrac{\sqrt{2mE}}{\hbar} and α=2m(V−E)ℏ\alpha = \dfrac{\sqrt{2m(V - E)}}{\hbar}.

  • Region I (x<0x < 0, V=0V = 0): ψI=A1eikx+B1e−ikx\psi_I = A_1 e^{ikx} + B_1 e^{-ikx} (incident + reflected)
  • Region II (0<x<L0 < x < L, potential VV): ψII=A2eαx+B2e−αx\psi_{II} = A_2 e^{\alpha x} + B_2 e^{-\alpha x}
  • Region III (x>Lx > L, V=0V = 0): ψIII=A3eikx\psi_{III} = A_3 e^{ikx} (transmitted only)

Boundary conditions

ψ\psi and dψ/dxd\psi/dx are continuous at x=0x = 0 and x=Lx = L:

A1+B1=A2+B2ik(A1−B1)=α(A2−B2)A2eαL+B2e−αL=A3eikLα(A2eαL−B2e−αL)=ikA3eikL\begin{aligned} A_1 + B_1 &= A_2 + B_2 \\ ik(A_1 - B_1) &= \alpha(A_2 - B_2) \\ A_2 e^{\alpha L} + B_2 e^{-\alpha L} &= A_3 e^{ikL} \\ \alpha(A_2 e^{\alpha L} - B_2 e^{-\alpha L}) &= ik A_3 e^{ikL} \end{aligned}

Transmission coefficient

The tunnelling probability is the ratio of transmitted to incident flux. Since the speed is the same in regions I and III:

T=∣A3∣2∣A1∣2T = \frac{|A_3|^2}{|A_1|^2}

Eliminating B1,A2,B2B_1, A_2, B_2 from the four equations gives the exact result

T=[1+V2sinh⁡2(αL)4E(V−E)]−1T = \left[1 + \frac{V^2 \sinh^2(\alpha L)}{4E(V - E)}\right]^{-1}

Wide or high barrier (αL≫1\alpha L \gg 1)

Then sinh⁡(αL)≈12eαL\sinh(\alpha L) \approx \tfrac{1}{2}e^{\alpha L}, so sinh⁡2(αL)≈14e2αL≫1\sinh^2(\alpha L) \approx \tfrac{1}{4}e^{2\alpha L} \gg 1 and the 1 can be neglected:

T≈16E(V−E)V2 e−2αL=T0exp⁡[−2L2m(V−E)ℏ]T \approx \frac{16E(V - E)}{V^2}\, e^{-2\alpha L} = T_0 \exp\left[-\frac{2L\sqrt{2m(V - E)}}{\hbar}\right]

with T0=16E(V−E)V2T_0 = \dfrac{16E(V-E)}{V^2}.

Conclusions

  1. TT falls exponentially with barrier width LL; doubling LL greatly reduces tunnelling.
  2. TT falls as V−E\sqrt{V - E} rises, so a higher barrier or a lower electron energy reduces tunnelling.
  3. Heavier particles (larger mm) tunnel far less, which is why tunnelling is noticed for electrons and only for barriers of about a nanometre or less.
  4. Reflection probability is R=1−TR = 1 - T.

✓ Answer checked by Claude Opus 5.5 (high effort)

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