Skip to main content

Resistance of Si cube doped with Sb

Short answer

Pure Si: σi = e ni (μe+μh) = 4.18×10⁻⁶ S/cm, R = 1/σi ≈ 2.39×10⁵ Ω. Doping with 1 Sb per 10⁹ Si atoms gives Nd = 5×10¹³ cm⁻³, n ≈ Nd, σ ≈ e Nd μe = 1.08×10⁻² S/cm, R ≈ 92.5 Ω. Resistance drops about 2600 times.

Find the resistance of a cubic pure Si-Crystals at 300K. If this silicon sample is doped with Sb (one Sb in 10⁹ Si-atoms), what will be the new change in its resistance? Take atomic concentration = 5×10²² cm⁻³.

Assume: 1 cm cube (L=1L = 1 cm, A=1A = 1 cm2^2), ni=1.45×1010n_i = 1.45\times10^{10} cm−3^{-3}, μe=1350\mu_e = 1350, μh=450\mu_h = 450 cm2^2V−1^{-1}s−1^{-1} at 300 K.

Pure silicon

σi=eni(μe+μh)=1.602×10−19×1.45×1010×(1350+450)=4.18×10−6 Ω−1cm−1R=ρLA=1σi×1 cm1 cm2=2.39×105 Ω\begin{aligned} \sigma_i &= en_i(\mu_e+\mu_h) = 1.602\times10^{-19}\times1.45\times10^{10}\times(1350+450) \\ &= 4.18\times10^{-6}\ \Omega^{-1}\text{cm}^{-1} \\ R &= \frac{\rho L}{A} = \frac{1}{\sigma_i}\times\frac{1\ \text{cm}}{1\ \text{cm}^2} = 2.39\times10^{5}\ \Omega \end{aligned}

Doped with 1 Sb per 10910^9 Si atoms

Sb is a donor:

Nd=5×1022109=5×1013 cm−3,n≈Ndp=ni2Nd=4.2×106 cm−3 (negligible)σ=eNdμe=1.602×10−19×5×1013×1350=1.081×10−2 Ω−1cm−1R′=1σ=92.5 Ω\begin{aligned} N_d &= \frac{5\times10^{22}}{10^9} = 5\times10^{13}\ \text{cm}^{-3}, \quad n \approx N_d \\ p &= \frac{n_i^2}{N_d} = 4.2\times10^{6}\ \text{cm}^{-3}\ (\text{negligible}) \\ \sigma &= eN_d\mu_e = 1.602\times10^{-19}\times5\times10^{13}\times1350 = 1.081\times10^{-2}\ \Omega^{-1}\text{cm}^{-1} \\ R' &= \frac{1}{\sigma} = 92.5\ \Omega \end{aligned}

Change in resistance

ΔR=2.39×105−92.5≈2.39×105 Ω (decrease),RR′=2586\Delta R = 2.39\times10^{5} - 92.5 \approx 2.39\times10^{5}\ \Omega \ (\text{decrease}), \qquad \frac{R}{R'} = 2586

Answer: Pure Si: 2.39×1052.39\times10^{5} Ω\Omega; doped: 92.5 Ω\Omega. Resistance drops by about 2.39×1052.39\times10^5 Ω\Omega (about 2600 times), even though only one atom in a billion is replaced.

✓ Answer checked by Claude Opus 5.5 (high effort)

All Electrical Engineering Material chapter 6 questions →