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Resistance of Si cube doped with As and B

Short answer

Pure Si: R = 2.39×10^5 Ω. With 1 As per 10^9 Si atoms and 1 B per 10^9 Si atoms, compensation yields net doping zero, so R returns to 2.39×10^5 Ω.

Calculate the resistance of pure silicon cubic crystal of 1cm³ at room temperature. What will be the resistance of the cubic when it is doped with 1 arsenic in 10⁹ silicon atoms and 1 boron atom per billion silicon atoms? Atomic concentration of silicon is 5×10²² cm⁻³, ni = 1.45×10¹⁰ cm⁻³.

Resistance of a cube with side L=1L = 1 cm: R=ρL/A=ρ×1 cm1 cm2R = \rho L/A = \rho \times \dfrac{1\ \text{cm}}{1\ \text{cm}^2}, so RR in Ω\Omega equals ρ\rho in Ω\Omega cm.

Data: ni=1.45×1010n_i = 1.45\times10^{10} cm−3^{-3}, NSi=5×1022N_{Si} = 5\times10^{22} cm−3^{-3}, e=1.602×10−19e = 1.602\times10^{-19} C. Assumed room-temperature mobilities for Si: μe=1350\mu_e = 1350, μh=450\mu_h = 450 cm2^2V−1^{-1}s−1^{-1} (at such low doping, impurity scattering is negligible).

(a) Pure silicon

σ=eni(μe+μh)=1.602×10−19×1.45×1010×1800=4.18×10−6 Ω−1cm−1R=1σ=2.39×105 Ω\begin{aligned} \sigma &= e n_i(\mu_e + \mu_h) \\ &= 1.602\times10^{-19} \times 1.45\times10^{10} \times 1800 \\ &= 4.18\times10^{-6}\ \Omega^{-1}\text{cm}^{-1} \\ R &= \frac{1}{\sigma} = 2.39\times10^{5}\ \Omega \end{aligned}

(b) Doped with 1 As per 10910^9 Si atoms

Arsenic is a donor:

Nd=5×1022109=5×1013 cm−3≫nin≈Nd=5×1013 cm−3p=ni2n=(1.45×1010)25×1013=4.2×106 cm−3 (negligible)σ=enμe=1.602×10−19×5×1013×1350=1.081×10−2 Ω−1cm−1R=1σ=92.5 Ω\begin{aligned} N_d &= \frac{5\times10^{22}}{10^9} = 5\times10^{13}\ \text{cm}^{-3} \gg n_i \\ n &\approx N_d = 5\times10^{13}\ \text{cm}^{-3} \\ p &= \frac{n_i^2}{n} = \frac{(1.45\times10^{10})^2}{5\times10^{13}} = 4.2\times10^{6}\ \text{cm}^{-3} \ (\text{negligible}) \\ \sigma &= e n\mu_e = 1.602\times10^{-19} \times 5\times10^{13} \times 1350 \\ &= 1.081\times10^{-2}\ \Omega^{-1}\text{cm}^{-1} \\ R &= \frac{1}{\sigma} = 92.5\ \Omega \end{aligned}

(c) Doped with 1 B per billion Si atoms

Boron is an acceptor: Na=5×1013N_a = 5\times10^{13} cm−3^{-3}.

If boron is added together with the arsenic (both present): Na=NdN_a = N_d, so the acceptors capture all the electrons given by the donors (full compensation). The net doping Nd−Na=0N_d - N_a = 0, so the crystal behaves as intrinsic: n=p=nin = p = n_i.

R≈2.39×105 ΩR \approx 2.39\times10^{5}\ \Omega

If the crystal is doped with boron alone (p-type): p≈Na=5×1013p \approx N_a = 5\times10^{13} cm−3^{-3}.

σ=epμh=1.602×10−19×5×1013×450=3.60×10−3 Ω−1cm−1R=1σ=277 Ω\begin{aligned} \sigma &= e p\mu_h = 1.602\times10^{-19} \times 5\times10^{13} \times 450 \\ &= 3.60\times10^{-3}\ \Omega^{-1}\text{cm}^{-1} \\ R &= \frac{1}{\sigma} = 277\ \Omega \end{aligned}

Answer: Pure Si: R=2.39×105R = 2.39\times10^{5} Ω\Omega. With 1 As per 10910^9: R=92.5R = 92.5 Ω\Omega. With 1 As and 1 B per 10910^9: compensated, so RR returns to about 2.39×1052.39\times10^{5} Ω\Omega. (With 1 B per 10910^9 alone: R≈277R \approx 277 Ω\Omega.)

✓ Answer checked by Claude Opus 5.5 (high effort)

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